20V N-Channel Enhancement-Mode MOSFET

RDS(ON), Vgs@1.8V, Ids@2.0A= 75mΩ

RDS(ON), Vgs@2.5V, Ids@3.5A= 38mΩ

RDS(ON), Vgs@4.0V, Ids@4.5A= 30mΩ

RDS(ON), Vgs@4.5V, Ids@4.5A= 28mΩ

RDS(ON), Vgs@10V, Ids@5.0A= 25mΩ

 Features

? Advanced trench process technology

? High Density Cell Design For Ultra Low On-Resistance

? High Power and Current handing capability

? Ideal for Li ion battery pack applications